MP1529 Datasheet, Equivalent, Cross Reference Search
Type Designator: MP1529
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 106 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 110 °C
Transition Frequency (ft): 0.02 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
MP1529 Transistor Equivalent Substitute - Cross-Reference Search
MP1529 Datasheet (PDF)
mp1526.pdf
VCEO = -260 V, IC = -15 A Silicon PNP Epitaxial Planar Transistor MP1526 Data Sheet Description Package The MP1526 is a PNP transistor of -260 V, -15 A. TO3P-3L The product has constant hFE characteristics in a wide current range, providing high-quality audio sounds. (4) Features Complementary to MN1526 LAPT (Linear Amplifier Power Transistor) High Transition F
mp1526r mp1526o mp1526p.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MP1526DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -260V(Min)(BR)CEOComplement to Type MN1526APPLICATIONSPower amplifier applicationsRecommend for 150W high fidelity audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATI
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: NSVBC848BWT1G
History: NSVBC848BWT1G
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