All Transistors. MP2200A Datasheet

 

MP2200A Datasheet and Replacement


   Type Designator: MP2200A
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 106 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 110 °C
   Transition Frequency (ft): 0.2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
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MP2200A Datasheet (PDF)

 8.1. Size:349K  diodes
 dmp2200ufcl.pdf pdf_icon

MP2200A

DMP2200UFCLDual P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features Typical off board profile of 0.5mm - ideally suited for thin V(BR)DSS RDS(on) max ID max applications 200m @VGS = -4.5V -1.7 A Low RDS(ON) minimizes conduction losses 290m @VGS = -2.5V -1.3 A -20V PCB footprint of 2.56mm2 390m @VGS = -1.8V -1.1 A Totally Lead-Free & Fully RoHS Co

 8.2. Size:324K  diodes
 dmp2200udw.pdf pdf_icon

MP2200A

DMP2200UDW Dual P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features Low RDS(ON) Minimizes Conduction Losses V(BR)DSS RDS(on) max ID max Low Input Capacitance 260m @VGS = -4.5V Fast Switching Speed -20V 500m @VGS = -2.5V -0.9 A Low Input/Output Leakage 1000m @VGS = -1.8V ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: RN1909 | GES5812 | 40500 | KT8176V | 2G109 | NTE2547 | SJT5198NPN

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