MP42 Datasheet and Replacement

PMP4201V; PMP4201G;PMP4201YNPN/NPN matched double transistorsRev. 04 28 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolatedinternally.Table 1. Product overviewType number Package NPN/NPN

MP4209 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2--MOSV in One) MP4209 Industrial Applications High Power, High Speed Switching Applications Unit: mmFor Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver 4-V gate drivability Small package by full molding (SIP 10 pins) High drain power dissipation (4-device operation) : P

MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Four L2--MOSV in One) MP4212 Industrial Applications High Power High Speed Switching Applications Unit: mmH-Switch Driver 4-V gate drivability Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25C) Low drain-source ON resistance

MP4210 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2--MOSV inOne) MP4210 Industrial Applications High Power, High Speed Switching Applications Unit: mmFor Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver 4-V gate drivability Small package by full molding (SIP 10 pins) High drain power dissipation (4-device operation) : PT

MP4211 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2--MOSV inOne) MP4211 Industrial Applications High Power, High Speed Switching Applications Unit: mmFor Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver 4-V gate drivability Small package by full molding (SIP 10 pin) High drain power dissipation (4 devices operation) : PT

MP4208 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2--MOSV in One) MP4208 Industrial Applications High Power High Speed Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching -4 V gate drive available Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W

MP4208 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (L2--MOSV 4 in 1) MP4208 Industrial Applications High Power High Speed Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. -4 V gate drive available Small package by full molding (SIP 10 pin) High drain power dissipation (4 devices operation) : PT = 4 W (

PMP4201V; PMP4201G;PMP4201YNPN/NPN matched double transistorsRev. 04 28 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolatedinternally.Table 1. Product overviewType number Package NPN/NPN

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PMP4201V; PMP4201G;PMP4201YNPN/NPN matched double transistorsRev. 04 28 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolatedinternally.Table 1. Product overviewType number Package NPN/NPN

PMP4201V; PMP4201G;PMP4201YNPN/NPN matched double transistorsRev. 04 28 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolatedinternally.Table 1. Product overviewType number Package NPN/NPN

Silicon Bipolar Low Noise Microwave Transistors MP42141Case Styles Features Low Intrinsic Noise Figure (2.3dB Typical @ 1.0 GHz) High Power Gain At 1.0 GHz 18.0 dB Typical Gold Metalization Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels ION Implanted arsenic Emitter for Consistent Performance Descr

Silicon Bipolar Low Noise Microwave Transistors MP42001Case Styles Features Low Noise Figure (.8dB Typical @ 60 MHz) Large Dynamic Range (+25dBm @ 1Db Compression Point) Gold Metalization Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels Low 1/f Noise (1.0dB Typical @ 10 KHz) Description This series o