MPQ2369 Datasheet, Equivalent, Cross Reference Search
Type Designator: MPQ2369
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO116
MPQ2369 Transistor Equivalent Substitute - Cross-Reference Search
MPQ2369 Datasheet (PDF)
mmpq2369.pdf
MMPQ2369Quad SwitchingTransistorNPN SiliconMAXIMUM RATINGShttp://onsemi.comRating Symbol Value UnitCollector-Emitter Voltage VCEO 15 VdcCollector-Base Voltage VCB 40 Vdc16Emitter-Base Voltage VEB 4.5 Vdc1Collector Current IC 500 mAdcContinuousCASE 751B-05, STYLE 4FourSO-16Each TransistorsTransistor Equal Power1 16Total Power Dissipation PD W2 15
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: CHUMA10GP | GFT21-60 | 2SD2052 | D45H11G | 2N5882 | D60T8030 | 2SD1935
History: CHUMA10GP | GFT21-60 | 2SD2052 | D45H11G | 2N5882 | D60T8030 | 2SD1935
LIST
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050