MPQ3639 Datasheet. Specs and Replacement
Type Designator: MPQ3639 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 6 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO116
MPQ3639 Substitution
- BJT ⓘ Cross-Reference Search
MPQ3639 datasheet
NO PDF data!
Detailed specifications: MPQ3564, MPQ3565, MPQ3566, MPQ3567, MPQ3568, MPQ3569, MPQ3638, MPQ3638A, A940, MPQ3640, MPQ3641, MPQ3642, MPQ3643, MPQ3644, MPQ3645, MPQ3646, MPQ3691
Keywords - MPQ3639 pdf specs
MPQ3639 cross reference
MPQ3639 equivalent finder
MPQ3639 pdf lookup
MPQ3639 substitution
MPQ3639 replacement
History: CXT5551 | CZT127 | KMST3904 | MPQ3568
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
7408 mosfet | cs630 | 2sc2705 transistor | 647 transistor | d525 transistor | 2sc1583 | g60t60an3h | mosfet k8a50d
