MPQ5132 PDF and Equivalents Search

MPQ5132 Specs and Replacement

Type Designator: MPQ5132

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO116

- BJT ⓘ Cross-Reference Search

MPQ5132 datasheet

NO PDF data!

Detailed specifications: MPQ4917 , MPQ4964 , MPQ4965 , MPQ5127 , MPQ5128 , MPQ5129 , MPQ5130 , MPQ5131 , BD333 , MPQ5133 , MPQ5134 , MPQ5135 , MPQ5136 , MPQ5137 , MPQ5138 , MPQ5139 , MPQ5140 .

Keywords - MPQ5132 pdf specs

 MPQ5132 cross reference

 MPQ5132 equivalent finder

 MPQ5132 pdf lookup

 MPQ5132 substitution

 MPQ5132 replacement