MPQ5551R Datasheet. Specs and Replacement

Type Designator: MPQ5551R  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO116

 MPQ5551R Substitution

- BJT ⓘ Cross-Reference Search

 

MPQ5551R datasheet

NO PDF data!

Detailed specifications: MPQ5400R, MPQ5401, MPQ5401R, MPQ5447, MPQ5449, MPQ5550, MPQ5550R, MPQ5551, BD140, MPQ5816, MPQ5855, MPQ5856, MPQ5857, MPQ5858, MPQ5910, MPQ6076, MPQ6100

Keywords - MPQ5551R pdf specs

 MPQ5551R cross reference

 MPQ5551R equivalent finder

 MPQ5551R pdf lookup

 MPQ5551R substitution

 MPQ5551R replacement