MPS3827 Datasheet, Equivalent, Cross Reference Search
Type Designator: MPS3827
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.31 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
MPS3827 Transistor Equivalent Substitute - Cross-Reference Search
MPS3827 Datasheet (PDF)
mps3866r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS3866/DThe RF LineNPN SiliconMPS3866High-Frequency TransistorMRF3866R2 Tape and reel packaging options available for MRF3866R2:R2 suffix = 2,500 units per reelIC = 400 mAHIGHFREQUENCYTRANSISTORSMAXIMUM RATINGSNPN SILICONRating Symbol Value UnitCollectorEmitter Voltage VCEO 30 VdcCollector
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .