All Transistors. MPS5127 Datasheet

 

MPS5127 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MPS5127
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO92

 MPS5127 Transistor Equivalent Substitute - Cross-Reference Search

   

MPS5127 Datasheet (PDF)

 9.1. Size:96K  motorola
mps5179r.pdf

MPS5127
MPS5127

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS5179/DHigh Frequency TransistorNPN SiliconMPS5179Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 12 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 20 VdcEmitterBase Voltage VEBO 2.5 Vdc

 9.2. Size:992K  fairchild semi
pn5179 mps5179 mmbt5179.pdf

MPS5127
MPS5127

MPS5179 MMBT5179 PN5179CEC TO-92 C TO-92B B ESOT-23E BMark: 3CNPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifierswith collector currents in the 100 A to 30 mA range in commonemitter or common base mode of operation, and in low frequencydrift, high ouput UHF oscillators. Sourced from Process 40.Absolute Maximum Ratings* TA = 25C unless o

 9.3. Size:30K  samsung
mps5172.pdf

MPS5127

 9.4. Size:70K  central
2n5172 2n6076 mps5172 mps6076.pdf

MPS5127

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

 9.5. Size:135K  diodes
mps5179.pdf

MPS5127
MPS5127

NPN SILICON PLANARMPS5179HIGH FREQUENCY TRANSISTORI T I I T IT I I TI D T T T ID D I T T TI I I E-Line T T TO92 Compatible I T T I T I ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i i T T T i I iI I ed, applieds orpply ofMPS5179ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless ot

 9.6. Size:42K  onsemi
mps5179-d.pdf

MPS5127
MPS5127

MPS5179Preferred DeviceHigh Frequency TransistorNPN SiliconFeatures Pb-Free Packages are Available*http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector -Emitter Voltage VCEO 12 Vdc2BASECollector -Base Voltage VCBO 20 VdcEmitter -Base Voltage VEBO 2.5 Vdc1Collector Current - Continuous IC 50 mAdcEMITTERTotal Device Dissipation @ TA

 9.7. Size:244K  cdil
mps5172.pdf

MPS5127
MPS5127

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172TO-92Plastic PackageCBEABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 25 VVCBOCollector Base Voltage 25 VVEBOEmitter Base Voltage 5 VICCollector Current

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC5549

 

 
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