All Transistors. MPSH32 Datasheet

 

MPSH32 Datasheet and Replacement


   Type Designator: MPSH32
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 0.22 pF
   Forward Current Transfer Ratio (hFE), MIN: 27
   Noise Figure, dB: -
   Package: TO92
 

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MPSH32 Datasheet (PDF)

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MPSH32

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MPSH32

MPSH34NPN General Purpose Amplifier This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.TO-92 Sourced from process 47.1 See MPSH11 for characteristics.1. Bas

Datasheet: MPSH10 , MPSH11 , MPSH17 , MPSH19 , MPSH20 , MPSH24 , MPSH30 , MPSH31 , TIP36C , MPSH33 , MPSH34 , MPSH37 , MPSH54 , MPSH55 , MPSH81 , MPSH83 , MPSH85 .

History: BLS2731-110

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