MPSH32 Datasheet, Equivalent, Cross Reference Search
Type Designator: MPSH32
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 0.22 pF
Forward Current Transfer Ratio (hFE), MIN: 27
Noise Figure, dB: -
Package: TO92
MPSH32 Transistor Equivalent Substitute - Cross-Reference Search
MPSH32 Datasheet (PDF)
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mpsh34.pdf
MPSH34NPN General Purpose Amplifier This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.TO-92 Sourced from process 47.1 See MPSH11 for characteristics.1. Bas
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: EN2907 | 2SC1675K | MP1612A | BUX66C
History: EN2907 | 2SC1675K | MP1612A | BUX66C
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