MPSH34 Datasheet, Equivalent, Cross Reference Search
Type Designator: MPSH34
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 0.32 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO92
MPSH34 Transistor Equivalent Substitute - Cross-Reference Search
MPSH34 Datasheet (PDF)
..1. Size:26K fairchild semi
mpsh34.pdf
mpsh34.pdf
MPSH34NPN General Purpose Amplifier This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.TO-92 Sourced from process 47.1 See MPSH11 for characteristics.1. Bas
9.1. Size:33K no
mpsh19 mpsh20 mpsh30 mpsh31 mpsh32 mpsh37.pdf
mpsh19 mpsh20 mpsh30 mpsh31 mpsh32 mpsh37.pdf
Downloaded from DatasheetLib.com - datasheet search engine
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
