MPSH83 Datasheet, Equivalent, Cross Reference Search
Type Designator: MPSH83
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 0.3 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO92
MPSH83 Transistor Equivalent Substitute - Cross-Reference Search
MPSH83 Datasheet (PDF)
mpsh81 mmbth81.pdf
MPSH81 MMBTH81CEC TO-92BESOT-23BMark: 3DPNP RF TransistorThis device is designed for general RF amplifier and mixerapplications to 250 mHz with collector currents in the 1.0 mAto 30 mA range. Sourced from Process 75.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 20 VVCBO Collector-Base Voltage
mmbth81 mpsh81.pdf
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Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
