MPSH83 Specs and Replacement

Type Designator: MPSH83

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 600 MHz

Collector Capacitance (Cc): 0.3 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO92

 MPSH83 Substitution

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MPSH83 datasheet

 ..1. Size:111K  motorola

 mpsh83.pdf pdf_icon

MPSH83

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 9.1. Size:721K  fairchild semi

 mpsh81 mmbth81.pdf pdf_icon

MPSH83

MPSH81 MMBTH81 C E C TO-92 B E SOT-23 B Mark 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage... See More ⇒

 9.2. Size:598K  onsemi

 mmbth81 mpsh81.pdf pdf_icon

MPSH83

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: MPSH31, MPSH32, MPSH33, MPSH34, MPSH37, MPSH54, MPSH55, MPSH81, BDT88, MPSH85, MPSL01, MPSL01A, MPSL01B, MPSL07, MPSL08, MPSL51, MPSM83

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