MPSL51 Datasheet and Replacement
Type Designator: MPSL51
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.31 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
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MPSL51 Datasheet (PDF)
mpsl51.pdf

Discrete POWER & SignalTechnologiesMPSL51C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring high voltages. Sourced from Process74. See 2N5401 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 100 VV Collector-Bas
mpsl51.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTOR MPSL51TO-92CBECBEAmplifier Transistor.ABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 100 VCollector -Emitter Voltage VCEO 100 VEmitter -Base Voltage VEBO 4.0 VCollector Current Continuous IC 600 mAPower
mpsl51re.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSL51/DAmplifier TransistorPNP SiliconMPSL51COLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 100 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 100 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N1700 | MPQ5130 | BLX20 | DTL8045 | BUV51 | DRA3A15E | BD612
Keywords - MPSL51 transistor datasheet
MPSL51 cross reference
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History: 2N1700 | MPQ5130 | BLX20 | DTL8045 | BUV51 | DRA3A15E | BD612



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