2N4866 Specs and Replacement
Type Designator: 2N4866
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 90 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO114
2N4866 Substitution
- BJT ⓘ Cross-Reference Search
2N4866 datasheet
2n4856a 2n4857a 2n4858a 2n4859a 2n4860a 2n4861a.pdf ![]()
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TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com ... See More ⇒
2n4867-a 2n4868-a 2n4869-a.pdf ![]()
Databook.fxp 1/14/99 12 00 PM Page B-17 01/99 B-17 2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Audio Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage 40 V Gate Current 50 mA Continuous Device Power Dissipation 300mW Power Derating 1.7 mW/ C Storage Temperature Range 6... See More ⇒
Detailed specifications: 2N485, 2N4854, 2N4855, 2N486, 2N4862, 2N4863, 2N4864, 2N4865, 2SD2499, 2N487, 2N4872, 2N4873, 2N4874, 2N4875, 2N4876, 2N4877, 2N4878
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