MQ5132 Datasheet. Specs and Replacement
Type Designator: MQ5132
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO86
MQ5132 Substitution
- BJT ⓘ Cross-Reference Search
MQ5132 datasheet
NO PDF data!
Detailed specifications: MQ3906, MQ3906R, MQ3962, MQ5127, MQ5128, MQ5129, MQ5130, MQ5131, A1941, MQ5133, MQ5134, MQ5135, MQ5136, MQ5137, MQ5138, MQ5139, MQ5140
Keywords - MQ5132 pdf specs
MQ5132 cross reference
MQ5132 equivalent finder
MQ5132 pdf lookup
MQ5132 substitution
MQ5132 replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
irfb4321 | 2n333 | c3852 | irfp140 | ksc2383 datasheet | 2n3906 equivalent | a733 transistor equivalent | 2n5401 transistor datasheet
