MRF2001 Datasheet. Specs and Replacement
Type Designator: MRF2001
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector Current |Ic max|: 0.25 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Package: X79D
MRF2001 Substitution
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MRF2001 datasheet
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000 5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.0 8.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe... See More ⇒
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20060/D The RF Sub Micron Bipolar Line RF Power Bipolar Transistors MRF20060 The MRF20060 and MRF20060S are designed for broadband commercial MRF20060S and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for larg... See More ⇒
Detailed specifications: MQ5910, MQ6076, MQ918, MQ918R, MQ930, MQ930R, MRA1000-14L, MRA1000-7, S9013, MRF2001B, MRF2005, MRF2005B, MRF2010, MRF2010B, MRF207, MRF208, MRF209
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