All Transistors. MRF2010 Datasheet

 

MRF2010 Datasheet and Replacement


   Type Designator: MRF2010
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Noise Figure, dB: -
   Package: X79D
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MRF2010 Datasheet (PDF)

 9.1. Size:111K  motorola
 mrf2000-5l.pdf pdf_icon

MRF2010

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20005L/DThe RF LineMicrowave LinearMRF2000-5LPower TransistorDesigned primarily for wideband, large signal output and driver amplifierstages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers7.08.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe

 9.2. Size:111K  motorola
 mrf2000-.pdf pdf_icon

MRF2010

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20005L/DThe RF LineMicrowave LinearMRF2000-5LPower TransistorDesigned primarily for wideband, large signal output and driver amplifierstages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers7.08.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe

 9.3. Size:109K  motorola
 mrf20060 mrf20060s.pdf pdf_icon

MRF2010

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20060/DThe RF SubMicron Bipolar LineRF Power Bipolar TransistorsMRF20060The MRF20060 and MRF20060S are designed for broadband commercialMRF20060Sand industrial applications at frequencies from 1800 to 2000 MHz. The highgain, excellent linearity and broadband performance of these devices makethem ideal for larg

 9.4. Size:109K  motorola
 mrf20060rev0m.pdf pdf_icon

MRF2010

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20060/DThe RF SubMicron Bipolar LineRF Power Bipolar TransistorsMRF20060The MRF20060 and MRF20060S are designed for broadband commercialMRF20060Sand industrial applications at frequencies from 1800 to 2000 MHz. The highgain, excellent linearity and broadband performance of these devices makethem ideal for larg

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