All Transistors. MRF227 Datasheet

 

MRF227 Transistor. Datasheet pdf. Equivalent

Type Designator: MRF227

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 35 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 200 °C

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO39

MRF227 Transistor Equivalent Substitute - Cross-Reference Search

MRF227 Datasheet (PDF)

5.1. mrf224re.pdf Size:82K _motorola

MRF227
MRF227

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF224/D The RF Line NPN Silicon MRF224 RF Power Transistor . . . designed for 12.5 Volt VHF large–signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. • Specified 12.5 Volt, 175 MHz Characteristics — Output Power = 40 W 40 W, 175 MHz Power Gain = 4.5 dB Min RF PO

Datasheet: MRF215 , MRF216 , MRF221 , MRF222 , MRF223 , MRF224 , MRF225 , MRF226 , BC550 , MRF229 , MRF230 , MRF231 , MRF232 , MRF233 , MRF234 , MRF237 , MRF238 .

 


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