MRF227 Datasheet. Specs and Replacement

Type Designator: MRF227

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 35 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO39

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MRF227 datasheet

 9.1. Size:82K  motorola

 mrf224.pdf pdf_icon

MRF227

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF224/D The RF Line NPN Silicon MRF224 RF Power Transistor . . . designed for 12.5 Volt VHF large signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 40 W 40 W, 175 MHz Power Gain = 4.5 dB M... See More ⇒

 9.2. Size:82K  motorola

 mrf224re.pdf pdf_icon

MRF227

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF224/D The RF Line NPN Silicon MRF224 RF Power Transistor . . . designed for 12.5 Volt VHF large signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 40 W 40 W, 175 MHz Power Gain = 4.5 dB M... See More ⇒

Detailed specifications: MRF215, MRF216, MRF221, MRF222, MRF223, MRF224, MRF225, MRF226, 2SC2383, MRF229, MRF230, MRF231, MRF232, MRF233, MRF234, MRF237, MRF238

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