MRF234 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF234
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: X28
MRF234 Transistor Equivalent Substitute - Cross-Reference Search
MRF234 Datasheet (PDF)
9.1. Size:241K hgsemi
mrf235.pdf
mrf235.pdf
HG RF POWER TRANSISTORMRF235SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNPN Silicon RF power transistor MRF235Description: MRF235 is designed for 12.5V, mid-band large signal amplifier applications in industrial and commercial FM equipment operation in the 40-100MHz range. Mid band FM transistors. Features: Specified 12.5V, 90MHz characteristics Output Powe
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
