MRF316 Datasheet. Specs and Replacement

Type Designator: MRF316

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 220 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 9 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO128

 MRF316 Substitution

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MRF316 datasheet

 ..1. Size:123K  motorola

mrf316.pdf pdf_icon

MRF316

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF316/D The RF Line NPN Silicon MRF316 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts 80 W, 3.0 200 MHz Minimum Gain = 10 dB CONTROLLED Q BROADBAND RF POWE... See More ⇒

 0.1. Size:133K  motorola

mrf316rev7.pdf pdf_icon

MRF316

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF316/D The RF Line NPN Silicon MRF316 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts 80 W, 3.0 200 MHz Minimum Gain = 10 dB CONTROLLED Q BROADBAND RF POWE... See More ⇒

 0.2. Size:123K  motorola

mrf316re.pdf pdf_icon

MRF316

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF316/D The RF Line NPN Silicon MRF316 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts 80 W, 3.0 200 MHz Minimum Gain = 10 dB CONTROLLED Q BROADBAND RF POWE... See More ⇒

 9.1. Size:113K  motorola

mrf314.pdf pdf_icon

MRF316

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF314/D The RF Line NPN Silicon MRF314 RF Power Transistors . . . designed primarily for wideband large signal driver and output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts 30 W, 30 200 MHz Minimum Gain = 10 dB RF POWER 100% Tested ... See More ⇒

Detailed specifications: MRF245, MRF304, MRF305, MRF306, MRF309, MRF313, MRF314, MRF315, BC547, MRF317, MRF321, MRF323, MRF325, MRF326, MRF327, MRF328, MRF331

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