MRF326 Datasheet PDF and Equivalents Search

 ..1. Size:107K  motorola

 mrf326.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF326/D The RF Line NPN Silicon MRF326 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts 40 W, 225 to 400 MHz Minimum Gain = 9.0 dB CONTROLLED Q BROADBAND RF P... See More ⇒

 0.1. Size:107K  motorola

 mrf326re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF326/D The RF Line NPN Silicon MRF326 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts 40 W, 225 to 400 MHz Minimum Gain = 9.0 dB CONTROLLED Q BROADBAND RF P... See More ⇒

 9.1. Size:110K  motorola

 mrf323re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF323/D The RF Line NPN Silicon MRF323 RF Power Transistor . . . designed primarily for wideband large signal driver and predriver amplifier stages in the 200 500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts 20 W, 400 MHz Power Gain = 10 dB Min RF POWER Efficiency = 50% M... See More ⇒

 9.2. Size:114K  motorola

 mrf321.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF321/D The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large signal driver and predriver amplifier stages in 200 500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts 10 W, 400 MHz Power Gain = 12 dB Min RF POWER Efficiency = 50% Min... See More ⇒

 9.3. Size:128K  motorola

 mrf327.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF327/D The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band 80 W, 100 to 500 MHz Minimum Gain = 7.3 dB @ 400 MHz ... See More ⇒

 9.4. Size:95K  motorola

 mrf325re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF325/D The RF Line NPN Silicon MRF325 RF Power Transistor . . . designed primarily for wideband large signal output and driver amplifier stages in 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 30 Watts 30 W, 225 to 400 MHz Minimum Gain = 8.5 dB CONTROLLED Q E... See More ⇒

 9.5. Size:107K  motorola

 mrf329.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF329/D The RF Line NPN Silicon MRF329 RF Power Transistor . . . designed primarily for wideband large signal output and driver amplifier stages in the 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 100 Watts 100 W, 100 to 500 MHz Minimum Gain = 7.0 dB CONTROLLED Q... See More ⇒

 9.6. Size:114K  motorola

 mrf321re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF321/D The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large signal driver and predriver amplifier stages in 200 500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts 10 W, 400 MHz Power Gain = 12 dB Min RF POWER Efficiency = 50% Min... See More ⇒

 9.7. Size:128K  motorola

 mrf327re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF327/D The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band 80 W, 100 to 500 MHz Minimum Gain = 7.3 dB @ 400 MHz ... See More ⇒

 9.8. Size:166K  motorola

 mrf327rev1.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF327/D The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band 80 W, 100 to 500 MHz Minimum Gain = 7.3 dB @ 400 MHz ... See More ⇒

 9.9. Size:95K  motorola

 mrf325.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF325/D The RF Line NPN Silicon MRF325 RF Power Transistor . . . designed primarily for wideband large signal output and driver amplifier stages in 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 30 Watts 30 W, 225 to 400 MHz Minimum Gain = 8.5 dB CONTROLLED Q E... See More ⇒

 9.10. Size:110K  motorola

 mrf323.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF323/D The RF Line NPN Silicon MRF323 RF Power Transistor . . . designed primarily for wideband large signal driver and predriver amplifier stages in the 200 500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts 20 W, 400 MHz Power Gain = 10 dB Min RF POWER Efficiency = 50% M... See More ⇒

 9.11. Size:107K  motorola

 mrf329re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF329/D The RF Line NPN Silicon MRF329 RF Power Transistor . . . designed primarily for wideband large signal output and driver amplifier stages in the 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 100 Watts 100 W, 100 to 500 MHz Minimum Gain = 7.0 dB CONTROLLED Q... See More ⇒

 9.12. Size:80K  njs

 mrf329.pdf

... See More ⇒