All Transistors. MRF464 Datasheet

 

MRF464 Datasheet and Replacement


   Type Designator: MRF464
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: M174
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MRF464 Datasheet (PDF)

 ..1. Size:104K  motorola
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MRF464

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF464/DThe RF LineNPN SiliconMRF464RF Power Transistor. . . designed primarily for applications as a highpower linear amplifier from 2.0to 30 MHz, in single sideband mobile, marine and base station equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 80 W (PEP)80 W (PEP), 30 MHzMinimum G

 0.1. Size:104K  motorola
 mrf464re.pdf pdf_icon

MRF464

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF464/DThe RF LineNPN SiliconMRF464RF Power Transistor. . . designed primarily for applications as a highpower linear amplifier from 2.0to 30 MHz, in single sideband mobile, marine and base station equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 80 W (PEP)80 W (PEP), 30 MHzMinimum G

 9.1. Size:31K  eleflow
 mrf466.pdf pdf_icon

MRF464

ELEFLOW TECHNOLOGIES MRF466www.eleflow.com NPN Silicon RF power transistor MRF466 Description: MRF466 is designed primarily for applications as a highpower linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. 2N5941 Replacement. Features: Specified 28 Volt, 30 MHz Characteristics: Output Power = 40 W (PEP) or CW, Minimum Gain =

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BCX70RG | ZTX238A | KST3906 | BD153 | BCY59-8 | BLX63 | CMST5087

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