All Transistors. MRF5176 Datasheet

 

MRF5176 Datasheet and Replacement


   Type Designator: MRF5176
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 33 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: X54D
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MRF5176 Datasheet (PDF)

 8.1. Size:32K  advanced-semi
 mrf5175.pdf pdf_icon

MRF5176

MRF5175NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5175 is Designed for High Power Class C Amplifier in, 225 PACKAGE STYLE .280 4L STUD to 400 MHz Military Communication AEquipment. 45C FEATURES:B E E Class C Operation B C PG = 11 dB at 5.0 W/400 MHz DJ Omnigold Metalization System E IFGMAXIMUM RATINGS H#8-32 UNCK

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2T7538C | 2N2955 | IMX3 | RN2909FE | MMS8550 | TSC236CI | UN9110S

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