MRF5176 Datasheet. Specs and Replacement
Type Designator: MRF5176
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 33 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: X54D
MRF5176 Substitution
- BJT ⓘ Cross-Reference Search
MRF5176 datasheet
MRF5175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The ASI MRF5175 is Designed for High Power Class C Amplifier in, 225 PACKAGE STYLE .280 4L STUD to 400 MHz Military Communication A Equipment. 45 C FEATURES B E E Class C Operation B C PG = 11 dB at 5.0 W/400 MHz D J Omnigold Metalization System E I F G MAXIMUM RATINGS H #8-32 UNC K... See More ⇒
Detailed specifications: MRF476, MRF485, MRF501, MRF502, MRF515, MRF517, MRF5174, MRF5175, BC546, MRF5177, MRF519, MRF5211, MRF5211LT1, MRF525, MRF531, MRF571, MRF5711
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