All Transistors. MRF901LT1 Datasheet

 

MRF901LT1 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MRF901LT1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4500 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT143

 MRF901LT1 Transistor Equivalent Substitute - Cross-Reference Search

   

MRF901LT1 Datasheet (PDF)

 8.1. Size:267K  motorola
mmbr901lt1 mps901 mrf901 mrf9011lt1.pdf

MRF901LT1
MRF901LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR901LT1/DThe RF LineMMBR901LT1, T3NPN SiliconMPS901 MRF901High-Frequency TransistorMRF9011LT1Designed primarily for use in highgain, lownoise smallsignal amplifiers foroperation up to 2.5 GHz. Also usable in applications requiring fast switchingtimes. High CurrentGain Bandwidth ProductIC

 9.1. Size:365K  freescale
mrf9060.pdf

MRF901LT1
MRF901LT1

Document Number: MRF9060Freescale SemiconductorRev. 9, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9060LR1Designed for broadband commercial and industrial applications with frequen-cies up to 1000 MHz. The high gain and broadband performance of theseMRF9060LSR1devices make them ideal for large-signal, common-source amplif

 9.2. Size:331K  freescale
mrf9085.pdf

MRF901LT1
MRF901LT1

Document Number: MRF9085Freescale SemiconductorRev. 11, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9085LR3Designed for broadband commercial and industrial applications withMRF9085LSR3frequencies from 865 to 895 MHz. The high gain and broadband performanceof these devices make them ideal for large-signal, common-source am

 9.3. Size:481K  freescale
mrf9080.pdf

MRF901LT1
MRF901LT1

Document Number: MRF9080Freescale SemiconductorRev. 6, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9080LR3Designed for GSM 900 MHz frequency band, the high gain and broadbandMRF9080LSR3performance of these devices make them ideal for large - signal, common -source amplifier applications in 26 volt base station equipment.

 9.4. Size:351K  freescale
mrf9030.pdf

MRF901LT1
MRF901LT1

Document Number: MRF9030Freescale SemiconductorRev. 8, 9/2008Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for broadband commercial and industrial applications with frequen-MRF9030LR1cies up to 1000 MHz. The high gain and broadband performance of this devicemake it ideal for large-signal, common-source amplifier applications in

 9.5. Size:392K  freescale
mrf9045.pdf

MRF901LT1
MRF901LT1

Document Number: MRF9045Freescale SemiconductorRev. 11, 9/2008Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9045LR1Designed for broadband commercial and industrial applications with frequen-cies up to 1000 MHz. The high gain and broadband performance of theseMRF9045LSR1devices make them ideal for large-signal, common-source ampli

 9.6. Size:394K  freescale
mrf9002nr2.pdf

MRF901LT1
MRF901LT1

Document Number: MRF9002NR2Freescale SemiconductorRev. 8, 5/2006Technical DataRF Power Field Effect Transistor ArrayN-Channel Enhancement-Mode Lateral MOSFETMRF9002NR2Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this devicemake it ideal for large-signal, common-source amplifier applica

 9.7. Size:449K  freescale
mrf9060n.pdf

MRF901LT1
MRF901LT1

Document Number: MRF9060NFreescale SemiconductorRev. 13, 6/2009Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for broadband commercial and industrial applications with frequen-MRF9060NR1cies up to 1000 MHz. The high gain and broadband performance of this devicemake it ideal for large-signal, common-source amplifier applications

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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