MRF9331LT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF9331LT1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector Current |Ic max|: 0.002 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5000 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT143
MRF9331LT1 Transistor Equivalent Substitute - Cross-Reference Search
MRF9331LT1 Datasheet (PDF)
mrf9331lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9331LT1/DThe RF LineNPN SiliconMRF9331LT1High-Frequency TransistorDesigned primarily for use in low power amplifiers to 1.0 GHz. Ideal forpagers and other battery operated systems where low power consumption iscritical. Low Power Consumption Characterized for IE = 0.1 to 1.0 mAIC = 1.0 mASURFACE MOUNTED
mrf9331l.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9331LT1/DThe RF LineNPN SiliconMRF9331LT1High-Frequency TransistorDesigned primarily for use in low power amplifiers to 1.0 GHz. Ideal forpagers and other battery operated systems where low power consumption iscritical. Low Power Consumption Characterized for IE = 0.1 to 1.0 mAIC = 1.0 mASURFACE MOUNTED
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
