MRF9411BLT1 Datasheet and Replacement
Type Designator: MRF9411BLT1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 8000 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT143
MRF9411BLT1 Datasheet (PDF)
mrf941 mmbr941lt1 mrf9411lt1 mrf947.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR941LT1/DThe RF LineMMBR941NPN SiliconMRF941Low Noise, High-FrequencyMRF947TransistorsMRF9411Designed for use in high gain, low noise smallsignal amplifiers. This seriesfeatures excellent broadband linearity and is offered in a variety of packages.SERIES Fully Implanted Base and Emitter Structure
mrf949t1rev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF949T1/DThe RF LineMRF949T1NPN SiliconLow Noise TransistorsMotorolas MRF949 is a high performance NPN transistor designed for use inhigh gain, low noise smallsignal amplifiers. The MRF949 is well suited for low ICmax = 50 mAvoltage wireless applications. This device features a 9 GHz DC current LOW NOISEgain
mrf949t1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF949T1/DThe RF LineMRF949T1NPN SiliconLow Noise TransistorsMotorolas MRF949 is a high performance NPN transistor designed for use inhigh gain, low noise smallsignal amplifiers. The MRF949 is well suited for low ICmax = 50 mAvoltage wireless applications. This device features a 9 GHz DC current LOW NOISEgain
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2N5195 | 2SA1210S | 2SC5071
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History: 2N5195 | 2SA1210S | 2SC5071



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