MRF9411LT3 Datasheet and Replacement
Type Designator: MRF9411LT3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT143
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MRF9411LT3 Datasheet (PDF)
mrf941 mmbr941lt1 mrf9411lt1 mrf947.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR941LT1/DThe RF LineMMBR941NPN SiliconMRF941Low Noise, High-FrequencyMRF947TransistorsMRF9411Designed for use in high gain, low noise smallsignal amplifiers. This seriesfeatures excellent broadband linearity and is offered in a variety of packages.SERIES Fully Implanted Base and Emitter Structure
mrf949t1rev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF949T1/DThe RF LineMRF949T1NPN SiliconLow Noise TransistorsMotorolas MRF949 is a high performance NPN transistor designed for use inhigh gain, low noise smallsignal amplifiers. The MRF949 is well suited for low ICmax = 50 mAvoltage wireless applications. This device features a 9 GHz DC current LOW NOISEgain
mrf949t1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF949T1/DThe RF LineMRF949T1NPN SiliconLow Noise TransistorsMotorolas MRF949 is a high performance NPN transistor designed for use inhigh gain, low noise smallsignal amplifiers. The MRF949 is well suited for low ICmax = 50 mAvoltage wireless applications. This device features a 9 GHz DC current LOW NOISEgain
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: TN4143 | BTB1424AT3 | 2SB1144S | 2N2473 | MM4019 | BF420A | 2N3183
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History: TN4143 | BTB1424AT3 | 2SB1144S | 2N2473 | MM4019 | BF420A | 2N3183



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