MRF947AT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF947AT1
SMD Transistor Code: G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.188 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 8000 MHz
Collector Capacitance (Cc): 0.3 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: SOT23
MRF947AT1 Transistor Equivalent Substitute - Cross-Reference Search
MRF947AT1 Datasheet (PDF)
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF949T1/DThe RF LineMRF949T1NPN SiliconLow Noise TransistorsMotorolas MRF949 is a high performance NPN transistor designed for use inhigh gain, low noise smallsignal amplifiers. The MRF949 is well suited for low ICmax = 50 mAvoltage wireless applications. This device features a 9 GHz DC current LOW NOISEgain
mrf949t1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF949T1/DThe RF LineMRF949T1NPN SiliconLow Noise TransistorsMotorolas MRF949 is a high performance NPN transistor designed for use inhigh gain, low noise smallsignal amplifiers. The MRF949 is well suited for low ICmax = 50 mAvoltage wireless applications. This device features a 9 GHz DC current LOW NOISEgain
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: D40DU4 | D43CJ9 | 2SD1909 | 2SD2039 | 2SC2819 | ZXTP19100CFF
History: D40DU4 | D43CJ9 | 2SD1909 | 2SD2039 | 2SC2819 | ZXTP19100CFF
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