2N4909 Specs and Replacement
Type Designator: 2N4909
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
- BJT ⓘ Cross-Reference Search
2N4909 datasheet
..1. Size:11K semelab
2n4909.pdf 
2N4909 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒
..2. Size:37K inchange semiconductor
2n4909.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4909 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCB... See More ⇒
9.2. Size:124K comset
2n4901-2n4902-2n4903.pdf
PNP SILICON TRANSISTORS, PNP SILICON TRANSISTORS, EPITAXIAL BASE EPITAXIAL BASE LF Large signal power amplification Switching medium current ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N4901 -40 VCBO Collector to Base Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCEO #Collector-Emitter Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCER Collector-Emitter Voltage 2... See More ⇒
9.5. Size:11K semelab
2n4908.pdf
2N4908 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒
9.6. Size:10K semelab
2n4901smd.pdf
2N4901SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 40V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0... See More ⇒
9.7. Size:14K semelab
2n4900x.pdf
2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO 66 metal package. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. ... See More ⇒
9.8. Size:11K semelab
2n4907.pdf
2N4907 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 40V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒
9.9. Size:43K jmnic
2n4901 2n4902 2n4903.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION With TO-3 package Complement to type 2N5067,2N5068,2N5069 Low collector-emitter saturation voltage APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) an... See More ⇒
9.10. Size:50K jmnic
2n4898 2n4899 2n4900.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fi... See More ⇒
9.11. Size:37K inchange semiconductor
2n4908.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4908 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCB... See More ⇒
9.12. Size:131K inchange semiconductor
2n4904 2n4905 2n4906.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4904 2N4905 2N4906 DESCRIPTION With TO-3 package Complement to type 2N4913/4914/4915 Low collector saturation voltage APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll... See More ⇒
9.13. Size:37K inchange semiconductor
2n4902.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4902 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- hFE= 20-80 @IC= -1A Complement to Type 2N5068 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB... See More ⇒
9.14. Size:37K inchange semiconductor
2n4903.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4903 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- hFE= 20-80 @IC= -1A Complement to Type 2N5069 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB... See More ⇒
9.15. Size:36K inchange semiconductor
2n4906.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4906 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- hFE= 25-100 @IC= -2.5A Complement to Type 2N4915 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) S... See More ⇒
9.16. Size:117K inchange semiconductor
2n4901 2n4902 2n4903.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION With TO-3 package Complement to type 2N5067/5068/5069 Low collector saturation voltage APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll... See More ⇒
9.17. Size:37K inchange semiconductor
2n4904.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4904 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- hFE= 25-100 @IC= -2.5A Complement to Type 2N4913 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) S... See More ⇒
9.18. Size:37K inchange semiconductor
2n4907.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4907 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCB... See More ⇒
9.19. Size:126K inchange semiconductor
2n4898 2n4899 2n4900.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi... See More ⇒
Detailed specifications: 2N4901SM, 2N4902, 2N4903, 2N4904, 2N4905, 2N4906, 2N4907, 2N4908, 2N2907, 2N4910, 2N4910SM, 2N4911, 2N4911SM, 2N4912, 2N4912SM, 2N4912X, 2N4913
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