2N4930 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N4930
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
2N4930 Transistor Equivalent Substitute - Cross-Reference Search
2N4930 Datasheet (PDF)
2n4928 2n4929 2n4930 2n4931.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n3743 2n4930 2n4931.pdf
TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices Qualified Level JAN, JANTX 2N3743 2N4930 2N4931 JANTXV MAXIMUM RATINGS Ratings Sym 2N3743 2N4930 2N4931 Unit Collector-Emitter Voltage 300 200 250 Vdc VCEO Collector-Base Voltage 300 200 250 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Collector Current 200 mAdc IC Total
2n4939dcsm.pdf
"2N4938DCSM"2N4939DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 40V CEO6.22 0.13 A = 1.2
Datasheet: 2N4926 , 2N4926S , 2N4927 , 2N4927S , 2N4928 , 2N4928S , 2N4929 , 2N4929S , 2SA1943 , 2N4930S , 2N4931 , 2N4931S , 2N4932 , 2N4933 , 2N4934 , 2N4935 , 2N4936 .
