All Transistors. 2N4930S Datasheet

 

2N4930S Datasheet and Replacement


   Type Designator: 2N4930S
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO39-1
 

 2N4930S Substitution

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2N4930S Datasheet (PDF)

 8.1. Size:58K  central
 2n4928 2n4929 2n4930 2n4931.pdf pdf_icon

2N4930S

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.2. Size:55K  microsemi
 2n3743 2n4930 2n4931.pdf pdf_icon

2N4930S

TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices Qualified Level JAN, JANTX 2N3743 2N4930 2N4931 JANTXV MAXIMUM RATINGS Ratings Sym 2N3743 2N4930 2N4931 Unit Collector-Emitter Voltage 300 200 250 Vdc VCEO Collector-Base Voltage 300 200 250 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Collector Current 200 mAdc IC Total

 9.1. Size:9K  semelab
 2n4939dcsm.pdf pdf_icon

2N4930S

"2N4938DCSM"2N4939DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 40V CEO6.22 0.13 A = 1.2

Datasheet: 2N4926S , 2N4927 , 2N4927S , 2N4928 , 2N4928S , 2N4929 , 2N4929S , 2N4930 , BC337 , 2N4931 , 2N4931S , 2N4932 , 2N4933 , 2N4934 , 2N4935 , 2N4936 , 2N4937 .

History: 2N4915 | 2N699S | 2N4929S | 2N1899 | 2N4968 | D33J23 | 2SB993

Keywords - 2N4930S transistor datasheet

 2N4930S cross reference
 2N4930S equivalent finder
 2N4930S lookup
 2N4930S substitution
 2N4930S replacement

 

 
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