All Transistors. 2N4952 Datasheet

 

2N4952 Datasheet and Replacement


   Type Designator: 2N4952
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92
 

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2N4952 Datasheet (PDF)

 ..1. Size:1285K  sprague
 2n4265 2n4400 2n4401 2n4402 2n4403 2n4409 2n4410 2n4424 2n4425 2n4951 2n4952 2n4953 2n4954 2n5087 2n5088 2n5089.pdf pdf_icon

2N4952

 9.1. Size:60K  fairchild semi
 2n4953.pdf pdf_icon

2N4952

2N4953NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. Sourced from Process 10.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO C

 9.2. Size:43K  semicoa
 2n4957.pdf pdf_icon

2N4952

Data Sheet No. 2N4957Generic Part Number:Type 2N49572N4957Geometry 0006Polarity PNPREF: MIL-PRF-19500/426Qual Level: JAN - JANSFeatures: Small signal RF silicon transistordesigned for high-gain, low-noiseapplications. Housed in a TO-72 case. Also available in chip form usingthe 0006 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/426

Datasheet: 2N4943 , 2N4944 , 2N4945 , 2N4946 , 2N495 , 2N4950 , 2N4951 , 2N495-18 , TIP35C , 2N4953 , 2N4954 , 2N4955 , 2N4955-78 , 2N4956 , 2N4956-78 , 2N4957 , 2N4957UB .

Keywords - 2N4952 transistor datasheet

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