2N4956 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N4956
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.45 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: R137
2N4956 Transistor Equivalent Substitute - Cross-Reference Search
2N4956 Datasheet (PDF)
2n4953.pdf
2N4953NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. Sourced from Process 10.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO C
2n4957.pdf
Data Sheet No. 2N4957Generic Part Number:Type 2N49572N4957Geometry 0006Polarity PNPREF: MIL-PRF-19500/426Qual Level: JAN - JANSFeatures: Small signal RF silicon transistordesigned for high-gain, low-noiseapplications. Housed in a TO-72 case. Also available in chip form usingthe 0006 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/426
Datasheet: 2N4950 , 2N4951 , 2N495-18 , 2N4952 , 2N4953 , 2N4954 , 2N4955 , 2N4955-78 , C3198 , 2N4956-78 , 2N4957 , 2N4957UB , 2N4958 , 2N4958UB , 2N4959 , 2N4959UB , 2N496 .
