2N4959UB pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N4959UB Specs and Replacement

Type Designator: 2N4959UB

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1600 MHz

Collector Capacitance (Cc): 0.4 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: LCC3

2N4959UB Substitution

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2N4959UB datasheet

9.1. Size:60K fairchild semi

2n4953.pdf pdf_icon

2N4953 NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. Sourced from Process 10. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO C... See More ⇒

9.2. Size:43K semicoa

2n4957.pdf pdf_icon

Data Sheet No. 2N4957 Generic Part Number Type 2N4957 2N4957 Geometry 0006 Polarity PNP REF MIL-PRF-19500/426 Qual Level JAN - JANS Features Small signal RF silicon transistor designed for high-gain, low-noise applications. Housed in a TO-72 case. Also available in chip form using the 0006 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/426 ... See More ⇒

9.3. Size:1285K sprague

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