2N4966 Specs and Replacement
Type Designator: 2N4966
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 45
Package: TO106
2N4966 Substitution
- BJT ⓘ Cross-Reference Search
2N4966 datasheet
2n4960 2n4961 2n4962 2n4963.pdf ![]()
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Detailed specifications: 2N496, 2N4960, 2N4961, 2N496-18, 2N4962, 2N4963, 2N4964, 2N4965, 2SB817, 2N4967, 2N4968, 2N4969, 2N497, 2N4970, 2N4971, 2N4972, 2N4973
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