2N4975 Specs and Replacement
Type Designator: 2N4975
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 175 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 15000
Package: TO12
2N4975 Substitution
- BJT ⓘ Cross-Reference Search
2N4975 datasheet
Detailed specifications: 2N4968, 2N4969, 2N497, 2N4970, 2N4971, 2N4972, 2N4973, 2N4974, D965, 2N4976, 2N497A, 2N498, 2N4980, 2N4981, 2N4982, 2N498A, 2N499
Keywords - 2N4975 pdf specs
2N4975 cross reference
2N4975 equivalent finder
2N4975 pdf lookup
2N4975 substitution
2N4975 replacement

