NKT62 Datasheet and Replacement

   Type Designator: NKT62
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.075 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 8 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO5
     - BJT ⓘ Cross-Reference Search