NKT656 Specs and Replacement
Type Designator: NKT656
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.065 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO72
NKT656 Substitution
- BJT ⓘ Cross-Reference Search
NKT656 datasheet
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Detailed specifications: NKT54, NKT603F, NKT613F, NKT62, NKT63, NKT64, NKT654, NKT655, S8550, NKT657, NKT674F, NKT677F, NKT713, NKT717, NKT72, NKT73, NKT732
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