All Transistors. 2N502B Datasheet

 

2N502B Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N502B
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.06 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO9

 2N502B Transistor Equivalent Substitute - Cross-Reference Search

   

2N502B Datasheet (PDF)

 9.1. Size:73K  central
 2n5022 2n5023.pdf

2N502B

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.2. Size:89K  interfet
 2n5020 2n5021.pdf

2N502B

Databook.fxp 1/13/99 2:09 PM Page B-18B-18 01/992N5020, 2N5021P-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Analog SwitchesReverse Gate Source & Reverse Gate Drain Voltage 50 VContinuous Forward Gate Current 50 mAContinuous Device Power Dissipation 500 mWPower Derating 4 mW/CStorage Temperature Range 65C to + 200CA

Datasheet: 2N5023S , 2N5024 , 2N5025 , 2N5026 , 2N5027 , 2N5028 , 2N5029 , 2N502A , 2SC4793 , 2N503 , 2N5030 , 2N5031 , 2N5032 , 2N5034 , 2N5035 , 2N5036 , 2N5037 .

 

 
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