2N502B PDF and Equivalents Search

 

2N502B Specs and Replacement

Type Designator: 2N502B

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.06 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO9

 2N502B Substitution

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2N502B datasheet

 9.1. Size:73K  central

2n5022 2n5023.pdf pdf_icon

2N502B

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒

 9.2. Size:89K  interfet

2n5020 2n5021.pdf pdf_icon

2N502B

Databook.fxp 1/13/99 2 09 PM Page B-18 B-18 01/99 2N5020, 2N5021 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage 50 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 500 mW Power Derating 4 mW/ C Storage Temperature Range 65 C to + 200 C A... See More ⇒

Detailed specifications: 2N5023S, 2N5024, 2N5025, 2N5026, 2N5027, 2N5028, 2N5029, 2N502A, A1941, 2N503, 2N5030, 2N5031, 2N5032, 2N5034, 2N5035, 2N5036, 2N5037

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