2N1131AS pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N1131AS Specs and Replacement

Type Designator: 2N1131AS

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO5

2N1131AS Substitution

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2N1131AS datasheet

8.1. Size:128K microsemi

2n1131l.pdf pdf_icon

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 DEVICES LEVELS 2N1131 2N1132 JAN 2N1131L 2N1132L JANTX JANTXV ABSOL... See More ⇒

9.1. Size:10K semelab

2n1132dcsm.pdf pdf_icon

2N1132DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 50V CEO 6.22 0.13 A = 1.27 0.13 I = 0.6A C (0.0... See More ⇒

9.2. Size:41K semelab

2n1132csm.pdf pdf_icon

2N1132CSM MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR FEATURES 1.02 0.10 0.51 0.10 (0.04 0.004) (0.02 0.004) 0.31 (0.012)rad. SILICON PNP TRANSISTOR. HIGH SPEED SWITCHING 3 SCREENING OPTIONS AVAILABLE 2 1 1.91 0.10 APPLICATIONS (0.075 0.004) 1.40 0.31 rad. (0.055) (0.012) 3.05 ... See More ⇒

9.3. Size:128K microsemi

2n1132l.pdf pdf_icon