2N5039-1 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5039-1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 140 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 75 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3
2N5039-1 Transistor Equivalent Substitute - Cross-Reference Search
2N5039-1 Datasheet (PDF)
2n5038 2n5039.pdf
Order this documentMOTOROLAby 2N5038/DSEMICONDUCTOR TECHNICAL DATA2N5038*2N5039NPN Silicon Transistors*Motorola Preferred Device. . . fast switching speeds and high current capacity ideally suit these parts for use inswitching regulators, inverters, wideband amplifiers and power oscillators in20 AMPEREindustrial and commercial applications.NPN SILICONPOWER TRANSIS
2n5038 2n5039.pdf
ABoca Semiconductor Corp. (BSC)http://www.bocasemi.comAhttp://www.bocasemi.comhttp://www.bocasemi.com
2n5038 2n5039.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5038/2N5039 DESCRIPTION With TO-3 package High current APPLICATIONS They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER COND
2n5038 2n5039.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038 2N5039 DESCRIPTION With TO-3 package High speed Low collector saturation voltage APPLICATIONS They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max
Datasheet: 2N5032 , 2N5034 , 2N5035 , 2N5036 , 2N5037 , 2N5038 , 2N5038-1 , 2N5039 , S8550 , 2N504 , 2N5040 , 2N5041 , 2N5042 , 2N5043 , 2N5044 , 2N5048 , 2N5049 .
