NZT7053 Datasheet. Specs and Replacement

Type Designator: NZT7053

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 15000

Noise Figure, dB: -

Package: SOT223

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NZT7053 datasheet

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NZT7053

Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C C TO-92 B B TO-226 C E SOT-223 B E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO C... See More ⇒

Detailed specifications: NTE43, NTE44, NTE45, NTE46, NTE48, NTE97, NTE98, NTE99, C3198, OC1070, OC1071, OC1075, OC170, OC171, OC20, OC200, OC201

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