2N1132 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1132
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO5
2N1132 Transistor Equivalent Substitute - Cross-Reference Search
2N1132 Datasheet (PDF)
2n1132dcsm.pdf
2N1132DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 50V CEO6.22 0.13 A = 1.27 0.13I = 0.6A C(0.0
2n1132csm.pdf
2N1132CSM MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR FEATURES 1.02 0.10 0.51 0.10 (0.04 0.004)(0.02 0.004) 0.31(0.012)rad. SILICON PNP TRANSISTOR. HIGH SPEED SWITCHING 3 SCREENING OPTIONS AVAILABLE 2 1 1.91 0.10APPLICATIONS (0.075 0.004)1.40 0.31rad.(0.055)(0.012) 3.05
2n1132l.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 DEVICES LEVELS 2N1131 2N1132 JAN 2N1131L 2N1132L JANTX JANTXV ABSOL
Datasheet: 2N112A , 2N113 , 2N1130 , 2N1131 , 2N1131-46 , 2N1131-51 , 2N1131A , 2N1131AS , 8050 , 2N1132-46 , 2N1132-51 , 2N1132A , 2N1132B , 2N1135 , 2N1135A , 2N1136 , 2N1136A .
