2N5050 Specs and Replacement
Type Designator: 2N5050
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 125 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 510 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO66
2N5050 Substitution
- BJT ⓘ Cross-Reference Search
2N5050 datasheet
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5050 2N5051 2N5052 DESCRIPTION With TO-66 package High breakdown voltage Excellent safe operating area APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute ma... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5050 2N5051 2N5052 DESCRIPTION With TO-66 package High breakdown voltage Excellent safe operating area APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolut... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
2N5052SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 200V IC = 2A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (... See More ⇒
Detailed specifications: 2N5040 , 2N5041 , 2N5042 , 2N5043 , 2N5044 , 2N5048 , 2N5049 , 2N505 , BC558 , 2N5051 , 2N5052 , 2N5052SM , 2N5053 , 2N5054 , 2N5055 , 2N5056 , 2N5057 .
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History: BU1507AX | 2SC3747S
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