2N5057 Specs and Replacement
Type Designator: 2N5057
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 800 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO18
2N5057 Substitution
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2N5057 datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
2N5052SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 200V IC = 2A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5050 2N5051 2N5052 DESCRIPTION With TO-66 package High breakdown voltage Excellent safe operating area APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute ma... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5050 2N5051 2N5052 DESCRIPTION With TO-66 package High breakdown voltage Excellent safe operating area APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolut... See More ⇒
Detailed specifications: 2N5050 , 2N5051 , 2N5052 , 2N5052SM , 2N5053 , 2N5054 , 2N5055 , 2N5056 , 9014 , 2N5058 , 2N5058S , 2N5059 , 2N5059S , 2N506 , 2N5065 , 2N5066 , 2N5067 .
History: 2SA1073 | 9013D | 9012G
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