OC81N Specs and Replacement
Type Designator: OC81N
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 80 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO1
OC81N Substitution
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OC81N datasheet
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Detailed specifications: OC812, OC813, OC814, OC815, OC816, OC817, OC81D, OC81DM, 13007, OC81Z, OC82, OC820, OC821, OC822, OC823, OC828, OC829
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