OC83N Specs and Replacement
Type Designator: OC83N
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.22 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 80 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO1
OC83N Substitution
- BJT ⓘ Cross-Reference Search
OC83N datasheet
NO PDF data!
Detailed specifications: OC828, OC829, OC82D, OC82DM, OC83, OC831, OC832, OC833, S9014, OC84, OC84N, OC870, OC871, OC872, OC880, OC881, OC882
Keywords - OC83N pdf specs
OC83N cross reference
OC83N equivalent finder
OC83N pdf lookup
OC83N substitution
OC83N replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
2sc1345 | 2sd555 | a950 transistor | k2611 | c1740 transistor | c828 transistor | c4467 | c2383 transistor
