2N5059S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5059S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO39
2N5059S Transistor Equivalent Substitute - Cross-Reference Search
2N5059S Datasheet (PDF)
2n5058 2n5059.pdf
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2n5052smd.pdf
2N5052SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 200V IC = 2A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
2n5050 2n5051 2n5052.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5050 2N5051 2N5052 DESCRIPTION With TO-66 package High breakdown voltage Excellent safe operating area APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66) and symbol Absolute ma
2n5050 2n5051 2n5052.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5050 2N5051 2N5052 DESCRIPTION With TO-66 package High breakdown voltage Excellent safe operating area APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolut
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
