2N506 Datasheet and Replacement
Type Designator: 2N506
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 80 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO22
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2N506 Datasheet (PDF)
2n5060 2n5062 2n5061 2n5064.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5060/D2N50602N5061*Silicon Controlled Rectifiers 2N5062Reverse Blocking Triode Thyristors*2N5064*Motorola preferred devices. . . Annular PNPN devices designed for high volume consumer applications such asrelay and lamp drivers, small motor controls, gate drivers for larger thyristors, andSCRssensing and de
2n5060.pdf

2N5060 SeriesPreferred DeviceSensitive GateSilicon Controlled RectifiersReverse Blocking ThyristorsAnnular PNPN devices designed for high volume consumerapplications such as relay and lamp drivers, small motor controls, gatehttp://onsemi.comdrivers for larger thyristors, and sensing and detection circuits.Supplied in an inexpensive plastic TO-226AA (TO-92) packageSCRswhich
2n5067 2n5068 2n5069.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5067 2N5068 2N5069 DESCRIPTION With TO-3 package Complement to type 2N4901,2N4902,2N4903 Low collector-emitter saturation voltage APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) an
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BDY23C | MCH3245 | BUY13S | BC212LB | 2SD1867 | MRF5812 | MRF432
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History: BDY23C | MCH3245 | BUY13S | BC212LB | 2SD1867 | MRF5812 | MRF432



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