2N5066 Specs and Replacement
Type Designator: 2N5066
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Package: TO46
2N5066 Substitution
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2N5066 datasheet
2n5060 2n5062 2n5061 2n5064.pdf ![]()
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5060/D 2N5060 2N5061 * Silicon Controlled Rectifiers 2N5062 Reverse Blocking Triode Thyristors * 2N5064 *Motorola preferred devices . . . Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and SCRs sensing and de... See More ⇒
2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate http //onsemi.com drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA (TO-92) package SCRs which... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5067 2N5068 2N5069 DESCRIPTION With TO-3 package Complement to type 2N4901,2N4902,2N4903 Low collector-emitter saturation voltage APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) an... See More ⇒
Detailed specifications: 2N5056, 2N5057, 2N5058, 2N5058S, 2N5059, 2N5059S, 2N506, 2N5065, 2SC2655, 2N5067, 2N5068, 2N5069, 2N507, 2N5070, 2N5071, 2N5072, 2N5073
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