2N5066 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5066
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO46
2N5066 Transistor Equivalent Substitute - Cross-Reference Search
2N5066 Datasheet (PDF)
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5060/D2N50602N5061*Silicon Controlled Rectifiers 2N5062Reverse Blocking Triode Thyristors*2N5064*Motorola preferred devices. . . Annular PNPN devices designed for high volume consumer applications such asrelay and lamp drivers, small motor controls, gate drivers for larger thyristors, andSCRssensing and de
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2n5067 2n5068 2n5069.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5067 2N5068 2N5069 DESCRIPTION With TO-3 package Complement to type 2N4901/4902/4903 Low collector saturation voltage APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Col
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
